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宇宙射线损坏电子线路有两种类型,带能量的带电粒子能穿透半导体,并激发电子-空穴对。另一方面粒子可以直接与单个硅原子(?)相互作用,并且产生各种(?)反冲带电粒子,而这些带电粒子又引起电子—空穴对。浓度剧增。 以前的文章列示了十一种宇宙射线与Si的有效的相互作用的物理性质,并估计了各自的剖面。我们结合这些宇宙射线通量的测量来测定Si中电荷的产生速率。我们计算了在动态RAM和在CCD电路中这些剧增将引起的软失效的速率。
There are two types of cosmic rays that can damage electronic circuits. Charged charged particles with energy penetrate the semiconductor and excite electron-hole pairs. On the other hand, the particles can directly interact with a single silicon atom (?), And produce a variety of (?) Recoil charged particles, which in turn cause electron-hole pairs. Concentration surge. Previous papers have listed the physical properties of eleven cosmic rays interacting effectively with Si and have estimated their respective profiles. We measured these cosmic ray flux measurements to determine the rate of charge generation in Si. We calculated the rate of soft failures that would result from these drastic increases in dynamic RAM and in the CCD circuit.