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实验研究了自对准结构的a－Si：HTFT的制备工艺，对其中关键的底部曝光和顶胶工艺进行了详细的研究和分析，对制备工艺和结构参数进行了合理的优化，成功地制备出自对准结构的a－Si：HTFT。对影响自对准结构a－Si：HTFT特性的主要因素进行了详细的分析，提出了一种新颖的双有源层结构的a-Si：HTFT，可以有效地改善a－Si：HTFT的开态特性，其通断电流比比ION／IOFF＞105。
The preparation process of a-Si: HTFT with self-aligned structure was studied experimentally. The key bottom exposure and top-coating process were studied and analyzed in detail. The preparation process and structural parameters were optimized and successfully prepared A-Si: HTFT from alignment structure. The main factors affecting the a-Si: HTFT properties of self-aligned structures are analyzed in detail. A novel a-Si: HTFT with double active layer structure is proposed to effectively improve a-Si: HTFT State characteristics, the on-off current ratio ION / IOFF> 105.