,Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd:YVO4 Laser

来源 :中国物理快报（英文版） | 被引量 : 0次 | 上传用户：wangzhenx06

【摘要】

：

We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.

【作者】

：

WANG Cui-Luan WANG Yong-Gang MA Xiao-Yu LIU Yang SUN Li-Qun TIAN Qian ZANG Zhi-Gang WANG Qin-Yue

【机构】

：

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083“,”Ultrafast Laser Laborator

【出处】

：

中国物理快报（英文版）

【发表日期】

：

2006年3期

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We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively. Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.

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,Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd:YVO4 Laser

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