根据过剩少数载流子寿命和高、低电场下响应率之比的实验结果,在10～100K温度范围内,推导了0.1eV n型HgCdTe光电导体双极迁移率与温度的关系。发现温度超过60K时,双极迁移率呈指数下降,而在30K和60K之间时为常值。温度超过60K的这种迁移率的性质表明,主要的散射机理是一种具有～16meV光子能量的极性光学光子的散射。这一结果对于SPRITE探测器的设计是有帮助的。 Based on the experimental results of the ratio of excess minority carrier lifetime and the response ratio under high and low electric fields, the relationship between the bipolar mobility and the temperature of 0.1eV n-type HgCdTe photoconductor was deduced in the temperature range of 10 ~ 100K. It is found that bipolar mobility decreases exponentially at temperatures above 60K and is constant at temperatures between 30K and 60K. The nature of this mobility at temperatures above 60K shows that the primary scattering mechanism is the scattering of a polar optical photon with ~ 16 meV photon energy. This result is helpful for the SPRITE detector design.