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采用CBD两步生长法和热蒸发法在Si衬底上生长ZnO纳米棒.研究发现,该方法对于ZnO纳米棒阵列的近带边复合发光有效衰减时间有很大影响.采用CBD方法生长的ZnO纳米棒的衰减曲线存在两个衰减指数,而通过热蒸发法生长的ZnO纳米棒只有一个衰减指数,实验结果显示CBD法生长的ZnO纳米棒其中较快的衰减指数与表面复合发光有关,慢的衰减指数对应体材料的衰减.另外,随着热处理温度从500℃到700℃,其表面复合速率急剧减小.
The growth of ZnO nanorods on Si substrate by CBD two-step growth method and thermal evaporation method was studied.The results show that this method has a great effect on the effective decay time of near-band edge recombination of ZnO nanorod arrays.With CBD method, ZnO The decay curve of nanorods has two attenuation indices, while the ZnO nanorods grown by thermal evaporation have only one decay index. The experimental results show that the faster decay index of ZnO nanorods grown by CBD method is related to the surface recombination luminescence, The attenuation index corresponds to the attenuation of the bulk material. In addition, as the heat treatment temperature is from 500 ° C to 700 ° C, the surface recombination rate drastically decreases.