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用故障树分析法对一款高温工作寿命试验过程中烧毁的Ga As功率单片集成电路(MMIC)进行失效分析。故障样品呈现为有源区烧毁,判定由电流过大或过热引起。故障树的顶事件为Ga As功放芯片烧毁,次级因素分为设计缺陷、内部因素及外围因素三个方面。然后列举导致过热或电流过大的情况并建立故障树,通过对故障树中的末级故障逐一排查后,最终定位其烧毁是由栅金属下沉引起。这种故障模式主要出现在长期高温情况下,一般在正常使用过程中不会出现。
Failure analysis of a GaAs power monolithic integrated circuit (MMIC) burned down during a high temperature service life test was conducted using fault tree analysis. Failure samples appear as the active area burned, judged by the current is too large or overheating. The top of the fault tree is GaAs amplifier chip burn, the secondary factors are divided into design flaws, internal factors and external factors in three aspects. And then lead to overheating or excessive current situation and the establishment of fault tree, through the failure of the fault tree troubleshooting one by one, the final positioning of its burned down by the gate metal caused. This failure mode occurs mainly in the case of long-term high temperature, usually during normal use will not appear.