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利用Ａｒ~＋束溅射沉积技术在ＨｇＣｄＴｅ表面低温生长了 ＣｄＴｅ介质薄膜．分别用 ＣｄＴｅ介质膜和 ＨｇＣｄＴｅ自身阳极氧化膜对 ＨｇＣｄＴｅ表面钝化．利用光电导衰退信号波形的拟合，得到了不同表面钝化的ＨｇＣｄＴｅ非平衡载流子表面复合速度结果表明，ＣｄＴｅ／ＨｇＣｄＴｅ界面质量已超过自身阳极氧化膜／ＨｇＣｄＴｅ界面质量
CdTe thin films were grown on the surface of HgCdTe by Ar ~ + beam sputtering deposition. The surface of HgCdTe was passivated with CdTe dielectric film and HgCdTe self-anodic oxide film respectively. The results show that the interface quality of CdTe / HgCdTe interface has exceeded the interface quality of the anodic oxide film / HgCdTe with the surface passivation of HgCdTe with different surface passivation.