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使用对Zn2N3:Mn薄膜热氧化的方法成功制备了高含N量的Mn和N共掺ZnO的稀磁半导体薄膜.在没有N离子共掺的情况下,ZnO:Mn薄膜的铁磁性非常微弱;如果进行N离子的共掺杂,就会发现ZnO:Mn薄膜在室温下表现出非常明显的铁磁性,饱和离子磁矩为0.23μB—0.61μB.这说明N的共掺激发了ZnO:Mn薄膜中的室温铁磁性,也就是受主的共掺引起的空穴有利于ZnO中二价Mn离子的铁磁性耦合,这和最近的相关理论研究符合很好.
The thin films of dilute magnetic semiconductors with Mn and N co-doping ZnO with high content of N were successfully prepared by the thermal oxidation of Zn2N3: Mn thin films. The ferromagnetism of ZnO: Mn thin films was very weak in the absence of N-co-doping. If co-doping of N ions, we found that the ZnO: Mn films show very obvious ferromagnetism at room temperature, the saturation magnetic moment is 0.23μB-0.61μB, which indicates that the co-doped N excites the ZnO: Mn films The room-temperature ferromagnetism, that is, holes due to acceptor co-doping, favors the ferromagnetic coupling of divalent Mn ions in ZnO, in good agreement with recent related theoretical studies.