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采用水热合成法在预先生长的ZnO种子层的玻璃衬底上制备出Al和Sb共掺ZnO纳米棒有序阵列薄膜.通过X射线衍射、扫描电镜、透射电镜和选区电子衍射分析表明:所制备的薄膜由垂直于ZnO种子层的纳米棒组成,呈单晶六角纤锌矿ZnO结构,且沿[001]方向择优生长,纳米棒的平均直径和长度分别为27.8nm和1.02μm.Al和Sb共掺ZnO纳米棒有序阵列薄膜的拉曼散射分析表明:相对于未掺杂ZnO薄膜的拉曼振动峰(580cm-1),Al和Sb共掺ZnO阵列薄膜的E1(LO)振动模式存在拉曼位移.当Al和Sb的掺杂量为3.0at%,4.0at%,5.0at%,6.0at%时,Al和Sb共掺ZnO阵列薄膜的拉曼振动峰的位移量分别为3,10,14,12cm-1.E1(LO)振动模式位移是由Al和Sb掺杂ZnO产生的缺陷引起的.室温光致发光结果表明:掺杂Al和Sb后,ZnO薄膜在545nm处的发光强度减小,在414nm处的发光强度增加.这是由于掺杂Al和Sb后,ZnO薄膜中Zni缺陷增加,Oi缺陷减少引起的.
Al and Sb codoped ZnO nanorods ordered arrays were prepared on the pre-grown ZnO seed layer glass substrates by hydrothermal method. The X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction analysis showed that The prepared films were composed of ZnO rods perpendicular to the ZnO seed layer and ZnO single crystal hexagonal wurtzite structure and preferentially grown along the [001] direction.The average diameter and length of the nanorods were 27.8nm and 1.02μm, respectively.Al and Raman scattering analysis of the Sb-doped ZnO nanorod ordered array films shows that the E1 (LO) vibrational modes of the Al and Sb codoped ZnO array films relative to the Raman peak (580cm-1) of undoped ZnO films Raman shifts exist.The Raman peak shifts of the Al and Sb co-doped ZnO array films when the doping amounts of Al and Sb are 3.0at%, 4.0at%, 5.0at% and 6.0at% are 3 , 10,14,12cm-1.E1 (LO) vibrational mode displacement is caused by defects caused by Al and Sb-doped ZnO.The results of photoluminescence at room temperature show that the ZnO thin films at 545nm The luminescence intensity decreases and the luminescence intensity increases at 414 nm, which is attributed to the increase of Zni defects and the decrease of Oi defects in ZnO films after Al and Sb doping.