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采用有机前驱体热解法制备了Al掺杂的单晶Si3N4纳米带,并实现了单晶纳米带Al掺杂浓度的调控。采用SEM、XRD、TEM和HRTEM等对所合成的Al掺杂单晶Si3N4纳米带进行了系统分析和表征。纳米带平均厚度约为几十纳米,平均宽度为几百纳米,具有完整的晶体结构,生长方向为[011],固-液-气-固(SLGS)生长机理。对Al掺杂的纳米带的光学性能进行了初步检测。结果表明:Al掺杂对单晶Si3N4纳米带的光学性能具有显著的影响,通过调节Al掺杂浓度,可以成功实现对纳米带光学性能的调控。
The Al-doped single crystal Si3N4 nanobelts were prepared by the organic precursor pyrolysis method, and the Al doping concentration of single crystal nanobelts was controlled. The synthesized Al-doped Si3N4 nanobelts were systematically analyzed and characterized by SEM, XRD, TEM and HRTEM. The average thickness of the nanoribbons is about tens of nanometers with an average width of several hundred nanometers and has a complete crystal structure with a growth direction of [011] and a solid-liquid-gas-solid (SLGS) growth mechanism. The optical properties of Al-doped nanoribbons were preliminarily tested. The results show that the Al doping has a significant effect on the optical properties of the single crystal Si3N4 nanobelts. By adjusting the Al doping concentration, the optical properties of the nanoribbons can be successfully controlled.