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采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4、SrMoO4)薄膜,对制备时间分别为10s直到50min的BaMoO4薄膜和制备时间分别为1min直到100min的SrMoO4薄膜的生长情况进行了SEM测试,并对相应结果进行了对比分析。研究表明:用电化学法制备BaMoO4和SrMoO4晶态薄膜,其生长特性既具有共性,也具有鲜明的个性。其共性特征是:1)成膜机制相同;2)薄膜生长初期就有比较完整的晶核生成;3)晶核和晶粒优先选择在金属基体缺陷(折叠、划痕、缺陷、凹凸不平等)处堆砌和生长;4)基体上晶粒的数量随着制备时间的增加而增加,晶粒的尺寸也随着时间的延长而长大,晶粒逐渐从稀疏分布到布满整个基体;5)在具有白钨矿结构的钼酸盐晶态薄膜的生长过程中,晶体的{111}面总是显露的。其鲜明的个性特征将在另文中讨论。该研究结果对功能晶态薄膜的生长(特别是利用电化学技术制备功能晶态薄膜的生长)和了解及预测白钨矿结构的晶态薄膜的生长习性,均具有重要意义。
BaMoO4 and SrMoO4 thin films with scheelite structure were prepared by galvanostatic electrochemical technique directly on BaMoO4 thin films with deposition time of 10s up to 50min and SrMoO4 with deposition time of 1min up to 100min respectively The growth of the film was SEM test, and the corresponding results were analyzed. The results show that the growth characteristics of BaMoO4 and SrMoO4 crystalline films prepared by electrochemical method are both common and distinct. The common features are as follows: 1) the same film forming mechanism; 2) relatively complete nucleation of nuclei at the initial stage of film growth; 3) nucleation and crystal preferential choice of metal matrix defects (folding, scratches, defects, ); 4) the number of grains on the matrix increases with the preparation time, the size of the grains also grows with the extension of time, and the grains gradually spread from the sparse to the whole matrix; 5 ) During the growth of molybdate crystalline thin films with scheelite structure, the {111} plane of the crystal is always revealed. Its distinctive personality traits will be discussed in another article. The results of this study are of great importance to the growth of functional crystalline thin films (especially the growth of functional crystalline thin films by electrochemical techniques) and the growth habit of crystalline thin films of scheelite structure.