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建立纯物质等温结晶中晶核形核和长大规则,采用遗传算法模拟晶核形核长大及其漂移效应。模拟结果表明:晶核界面迁移轨迹符合结晶理论,晶核漂移随机无规;在0～335模拟步(GAS)区间,所有晶核的模拟平均漂移距离和模拟平均漂移系数与模拟步数的乘积有平方根关系,拟合模拟平均漂移系数为3.96×10-13m2/GAS;在晶粒度评定计量单元下推导出转变相同体积分数时实际晶核长大所需时间与模拟时晶核长大所需模拟步数之间的关系,在等温结晶且晶核长大平均速率为10-4m/s时,晶核模拟平均漂移系数约在3.09×10-10～3.50×10-8m2/s数量级。
The rules of nucleation and growth of nuclei in isothermal crystallization of pure substance were established. Genetic algorithms were used to simulate nucleation and growth of nuclei and their drift effects. The simulation results show that the migration trajectory of nucleation interface accords with the theory of crystallization and the nucleus drift is random and random. The simulated average drift distance of all nuclei and the product of simulated average drift coefficient and simulated step number in GAS range from 0 to 335 The square root of the relationship between the simulated average drift coefficient of simulation 3.96 × 10-13m2 / GAS; derived in the grain size measurement unit under the transformation of the same volume fraction of the actual growth of the nucleus and the nucleus grow up when the required The relationship between the number of steps needed to be simulated is about 3.09 × 10-10 ~ 3.50 × 10-8m2 / s when the isothermal crystallization temperature is 10-4m / s.