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超大规模集成电路工艺中所需的粒子控制,无论在理论上还是在实际中都是困难的。当线宽缩小到微米和亚微米大小时,尺寸为最小条宽十分之一到四分之一的粒子会影响光刻胶的完整性和电路的工作。光刻胶工艺过程中的粒子控制不仅包括容器中光刻胶的清洁程度,而且还必须注意从预清洗到腐蚀和去胶各道工序中所有操作步骤的净化问题。为了使污染以及由污染造成的成品率损失有效地减小到最低程度,了解光刻胶加工过程中所有材料的反应是重要的。
Particle control needed in the very large scale integrated circuit process is difficult both in theory and in practice. When the linewidth is reduced to microns and submicron sizes, particles one tenth to one quarter the size of the smallest bar width can affect the integrity of the photoresist and the operation of the circuit. Particle control during a photoresist process includes not only the level of cleaning of the photoresist in the container, but also the cleanup issues of all steps from pre-cleaning to etching and de-bonding processes. In order to effectively minimize contamination and contamination loss due to contamination, it is important to understand the reactions of all materials during photoresist processing.