本文分析讨论了E型膜片结构的扩散硅力敏器件的应力分布及其特点以及三种典型晶面上的压阻效应特性,并给出了精确的曲线图.详细阐述了E型扩散硅力敏器件的力敏电阻条长度对灵敏度的影响,提出了这种力敏器件最适于测量低、微压力的理论依据. This paper analyzes and discusses the stress distribution of diffused silicon force-sensitive devices with E-type diaphragm structure and their characteristics as well as the piezoresistive characteristics of the three typical crystal planes, and gives an accurate graph. E-type diffused silicon The effect of the length of the force-sensing resistor strip on the sensitivity of the force-sensitive device is put forward. The theoretical basis of this type of force-sensitive device is the most suitable for measuring low and micro pressure.