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The method of multi-bias capacitance voltage measurement is presented.The physical meaning of gate-source and gate-drain capacitances in AlGaN/GaN HEMT and the variations in them with different bias conditions are discussed.A capacitance model is proposed to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances,and the power performance obtains good results compared with the measured data from the capacitance model.
The method of multi-bias capacitance voltage measurement is presented. The physical meaning of gate-source and gate-drain capacitances in AlGaN / GaN HEMT and the variations in them with different bias conditions are discussed. A capacitance model is reflected to reflect the behaviors of the gate-source and gate-drain capacitances, which shows a good agreement with the measured capacitances, and the power performance products good results compared with the measured data from the capacitance model.