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采用键合、光刻和电镀等微机电系统(MEMS)微细加工技术制备了不同结构的微型化Co基薄带。微型化Co基非晶薄带采用VACUUMSHMELZE公司生产的VC6025Z型材料,其结构设计为曲折型不同匝数(1~3匝)。在1~40 MHz频率内,研究了外加磁场的方向以及传感器的匝数对巨磁阻抗(GMI)效应的影响。研究发现,巨磁阻抗效应均呈现负值,这与材料本身具有较大的矫顽力这一属性有关。与外加横向磁场时的GMI效应相比,当外加磁场为纵向时,获得较大的巨磁阻抗效应负值。在电流频率为10 MHz、磁场强度120 Oe(1 A·m-1=4π×10-3 Oe)时,巨磁阻抗变化率达到最大值-64.2%。随着匝数的增加,巨磁阻抗变化率的最大值由1匝的-31.2%增加到3匝的-64.2%。GMI效应均有相同的变化趋势,随磁场强度的增加而降低,在某一磁场下达到负的最大值。
Different structures of miniaturized Co-based ribbons were prepared by micro-electromechanical system (MEMS) micro-fabrication techniques such as bonding, lithography and electroplating. The miniaturized Co-based amorphous ribbon adopts the VC6025Z type material manufactured by VACUUMSHMELZE Company. Its structure is designed to have different numbers of turns (1 ~ 3 turns). In the frequency of 1 ~ 40 MHz, the effect of the applied magnetic field and the number of turns of the sensor on the GMI effect are investigated. The study found that the giant magneto-impedance effect showed a negative value, which is related to the material itself has a larger coercivity properties. Compared with the GMI effect when a transverse magnetic field is applied, a large GMI negative value is obtained when the applied magnetic field is in the longitudinal direction. When the current frequency is 10 MHz and the magnetic field strength is 120 Oe (1 A · m-1 = 4π × 10-3 Oe), the maximum rate of change of giant magnetoresistance reaches -64.2%. As the number of turns increases, the maximum value of the rate of change of giant magnetoresistance increases from -31.2% of 1 turn to -64.2% of 3 turns. GMI effect has the same trend of change, with the magnetic field strength decreases, in a magnetic field reaches a negative maximum.