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报道了利用ＬＰ－ＭＯＶＰＥ技术生长高质量的ＩｎＧａＡｓ／ＩｎＧａＡｓＰ分别限制应变量子阱激光器结构材料、激光器制作和结果．宽而激光器实现了室温脉冲受激发射．激射波长为１．４９μｍ，在腔长为２０００μｍ时，最低阈值电流密度为０．３０ｋＡｃｍ－２．最大脉冲光输出峰值功率达５００ｍＷ以上．同时，从理论和实验上研究了阙值电流及阙值电流密度随激光器腔长的变化关系，并与ＬＰ－ＭＯＶＰＥ生长制作的宽面双异质结构激光器进行了比较．
Reported the use of LP-MOVPE technology to grow high quality InGaAs / InGaAsP confined strain quantum well laser structure materials, laser fabrication and results. Wide and pulsed laser excitation at room temperature. The lasing wavelength was 1.49 μm and the lowest threshold current density was 0.30 kAcm-2 at a cavity length of 2000 μm. The maximum pulsed light output peak power of 500mW or more. At the same time, the relationship between the threshold current and the threshold current density with the cavity length of the laser is studied theoretically and experimentally, and compared with the wide-facet double-heterostructure laser produced by LP-MOVPE.