一、引言在MOSIC设计中,通常需要考虑MOS器件源—衬底结反向偏压(简称衬底反偏电压V_(BS))对器件阈值电压V_T的影响。V_(BS)为衬底偏置电源电压V_(BB)与非接地源极对地电压之和。V_(BS)对NMOS的影响比对PMOS大。因此NMOSIC设计必须计及V_(BS)对V_T的影响,V_T随V_(BS)变化的定量关系为 I. INTRODUCTION In MOSIC design, it is usually necessary to consider the effect of MOS device source-substrate junction reverse bias (referred to as substrate reverse bias voltage V_ (BS)) on the device threshold voltage V_T. V_ (BS) is the sum of the substrate bias supply voltage V_ (BB) and the ungrounded source-to-ground voltage. The influence of V_ (BS) on NMOS is larger than that of PMOS. Therefore, the design of NMOSIC must take into account the effect of V_ (BS) on V_T. The quantitative relationship between V_T and V_ (BS)