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介绍了利用InGaAs长波长金属 半导体 金属 (MSM )光探测器与InAlAs/InGaAs高电子迁移率晶体管 (HEMT)集成来实现长波长单片集成光接收机的材料和电路设计、关键工艺途径等 ,解决了工艺兼容性问题 ,实现了 2 .5Gb/s传输速率下功能正确的单片集成长波长光接收机样品
The material and circuit design of the long wavelength monolithically integrated optical receiver integrated with InGaAs long wavelength metal semiconductor (MSM) photodetector and the InAlAs / InGaAs high electron mobility transistor (HEMT) are introduced, and the key technological approaches are introduced The process compatibility issues, to achieve the correct function of the 2 .5Gb / s transfer rate monolithic integrated long wavelength optical receiver samples