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采用热丝化学气相沉积方法在镀铜玻璃衬底上制备了柱状多晶硅薄膜。使用XRD、Raman光谱、扫描电子显微镜(SEM)和原子力显微镜(AFM)等测试手段研究了灯丝与衬底间距(5~10 mm)、灯丝温度(1800~1500℃)以及对应的衬底温度(在320~200℃变化)对多晶硅薄膜的微观形貌、结晶性及晶体学生长方向的影响规律。研究结果表明:在镀铜玻璃衬底上金属诱导生长的多晶硅薄膜具有较高的晶化率,较低的晶化温度,同时铜过渡层影响多晶硅薄膜的晶体学生长方向。
A columnar polycrystalline silicon thin film was prepared on a copper-clad glass substrate by hot wire chemical vapor deposition. The relationship between the filament pitch and the substrate pitch (5 ~ 10 mm), the filament temperature (1800 ~ 1500 ℃) and the corresponding substrate temperature were investigated using XRD, Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM) At 320 ~ 200 ℃) on the polycrystalline silicon film morphology, crystallinity and crystal growth direction of the law. The results show that the metal-induced growth of polycrystalline silicon thin films on copper-plated glass substrates has higher crystallization rate and lower crystallization temperature, and the copper transition layer affects the crystal growth direction of polycrystalline silicon thin films.