用单一结构研制低噪声和高增益ＦＥＴ据１９９３年第５７８期报道，日本三洋电机公司用单一器件结构研制接收和发射高频电路的ＦＥＴ。以往，用单一结构制作各种电路所要求的低噪声和高输出功率的电路很困难。该公司研制中改变晶体管的电流流向，而使器件达到低噪声和大输... Using a single structure to develop low-noise and high-gain FET According to 1993 No. 578 report, Japan’s Sanyo Electric Company with a single device structure developed to receive and launch high-frequency FET. In the past, it has been difficult to fabricate low noise and high output power circuits required by various circuits with a single structure. The development of the company to change the transistor current flow, leaving the device to achieve low noise and ...