论文部分内容阅读
通过原位测量对八-羟基喹啉铝薄膜(Alq_3)光致发光的厚度依赖性质进行了研究.在 Alq_3向玻璃衬底沉积的初始阶段,Alq_3光致发光谱峰发生了显著红移,此后谱峰随着 Alq_3厚度的增加红移变缓并趋于饱和.Alq_3薄膜厚度从2nm 逐渐变化到500nm 时,Alq_3谱峰位总红移约为12nm.这种 Alq_3薄膜沉积的初始阶段 Alq_3谱峰的显著红移可归因于二维激子向三维激子态的转变.同时,由于激子同衬底的相互作用所引起的非辐射衰变,在 Alq_3沉积的初始阶段 Alq_3光致发光谱峰的强度呈现不同的变化,随后该谱峰的强度随 Alq_3薄膜厚度的增加而快速增加,并在薄膜厚度较大时,趋向于饱和.
The thickness dependence of the photoluminescence of Alq_3 thin films was investigated by in-situ measurements.The Alq_3 photoluminescence peak shifted significantly in the initial stage of Alq_3 deposition to the glass substrate, The peak of red shift of Alq_3 gradually saturates with the increasing of the thickness of Alq_3, and the red shift of Alq_3 peak is about 12nm when the thickness of Alq_3 is gradually changed from 2nm to 500nm. The Alq_3 peak in the initial stage of Alq_3 thin film deposition The significant red shift can be attributed to the transition from two-dimensional excitons to three-dimensional excitons, and at the same time, due to the non-radiative decay caused by the interaction of excitons with the substrate, Alq_3 photoluminescence peak in the initial stage of Alq_3 deposition The intensity of the peak rapidly increases with the increase of Alq_3 film thickness, and tends to be saturated when the film thickness is larger.