美国得克萨斯大学和伊利诺斯大学联合开发出一种高性能δ掺杂 AlGaN/AIN/GaNHFET,其外延异质结构用低压 MOCVD 方法生长。这种性能极好的器件以半绝缘4H—SiC 作衬底。其外延结构为:一层100nm 的 AIN 缓冲层,3μm的非掺杂 GaN 层,1nm 的AIN 势垒层,然后是在生长5nm 后进行δ掺杂的30nm 厚的 Al_(0.2)Ga_(0.8)N 施主层。室温下 United States University of Texas and University of Illinois jointly developed a high-performance δ-doped AlGaN / AIN / GaNHFET, the epitaxial heterostructure growth by low-pressure MOCVD method. This excellent performance of the device to semi-insulating 4H-SiC substrate. The epitaxial structure is composed of a 100 nm AIN buffer layer, a 3 μm undoped GaN layer, a 1 nm AIN barrier layer, followed by a 30 nm thick Al 0.2 Ga 0.8 doped δ- N donor layer. At room temperature