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GaN films laterally overgrowth on bowl-shaped pattemed sapphire substrates by laser direct beam dril
[会议论文] 作者：王帅,刘浩,云峰,李虞锋,苏喜林,熊瀚,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
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GaN films laterally overgrowth on bowl-shaped pattemed sapphire substrates by laser direct beam dril
[会议论文] 作者：王帅,刘浩,苏喜林,熊瀚,李虞锋,云峰,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
The blooming optoelectronics market has urgent demands for the high efficiency of light-emitting diodes (LEDs) based on the gallium nitride (GaN) material system.Due to the large difference in the lat...
Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well str
[期刊论文] 作者：赵宇坤,李虞锋,黄亚平,王宏,苏喜林,丁文,云峰,,
来源：Chinese Physics B 年份：2015
Gallium nitride(Ga N) based light-emitting diodes(LEDs) with chirped multiple quantum well(MQW) structures have been investigated experimentally and numerically...
[会议论文] 作者：张敏妍,李虞锋,苏喜林,刘浩,王帅,丁文,张烨,云峰,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
蓝宝石图形化衬底可以降低GaN外延的穿透位错密度并同时提高GaN基LED光提取效率,因此受到了广泛关注.目前市场上大多数图形化蓝宝石衬底都是通过湿法和干法刻蚀制备出的微米级的凸面形貌,存在工艺繁琐,精准率不高等缺点.本文通过355nm激光器,通过激光打孔的方式......
[会议论文] 作者：张敏妍,侯洵,云峰,李虞锋,丁文,黄亚平,王越,魏政鸿,张维涵,苏喜林,
来源：第13届全国MOCVD学术会议 年份：2014
本文主要是通过APSYS模拟分析软件,研究了三种不同In含量的InGaN发光二极管的发光特性及其物理机制.研究中所用器件为1m×1m垂直结构,包含2μm n-GaN(掺杂浓度为5×1018cm-3),5个InxGa1-xN/GaN有源层(三种结构的In含量分别为:x=0.15,0.22,0.30),20nm的p-Al0.2Ga......
Investigation of the nucleation mechanism and process of GaN layers epitaxial growth on nano-pattern
[会议论文] 作者：王帅,熊瀚,云峰,刘浩,冯伦刚,丁文,王江腾,李虞锋,弓志娜,苏喜林,张烨,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
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Investigation of the nucleation mechanism and process of GaN layers epitaxial growth on nano-pattern
[会议论文] 作者：刘浩,李虞锋,苏喜林,丁文,张烨,熊瀚,王帅,冯伦刚,弓志娜,王江腾,云峰,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
The past decades have witnessed a tremendous advancement in the GaN-based light emitting diodes (LEDs) for general illumination applications.As we know,sapphire is one of the most common used substrat...
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