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A comparison of ionizing radiation damage in CMOS devices from ^60Co gamma rays, electrons and proto
[期刊论文] 作者：阿宝平,姚志斌,张凤祁,
来源：中国物理C：英文版 年份：2009
Radiation hardened CC4007RH and non-radiation hardened CC4011 devices were irradiated using 60Co gamma rays,1 MeV electrons and 1-9 MeV protons to compare the i...
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