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[学位论文] 作者：雷天飞,,
来源：电子科技大学 年份：2012
横向功率器件的比导通电阻(Ron.sp)和击穿电压(BV)之间存在超线性关系Ron,so(?)BV2.5,因此Ron,sp和BV的折衷关系是功率器件的主要问题。本文以此为研究方向,研究了以下3种新...
[期刊论文] 作者：高唤梅,罗小蓉,张伟,邓浩,雷天飞,,
来源：半导体学报 年份：2010
A new SOI LDMOS structure with buried n-islands(BNIs) on the top interface of the buried oxide(BOX) is presented in a p-SOI high voltage integrated circuits(p-S...
[期刊论文] 作者：胡夏融,张波,罗小蓉,王元刚,雷天飞,李肇基,,
来源：Chinese Physics B 年份：2012
A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-...
A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pi
[期刊论文] 作者：罗小蓉,王琦,姚国亮,王元刚,雷天飞,王沛,蒋永恒,周坤,张波,,
来源：Chinese Physics B 年份：2013
A high voltage(> 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed....
[期刊论文] 作者：雷天飞,罗小蓉,葛锐,陈曦,王元刚,姚国亮,蒋永恒,张波,李肇基,,
来源：半导体学报 年份：2011
An ultra-low specific on-resistance(R_(on,sp)) silicon-on-insulator(SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed.The MOSFET features doubl...
[期刊论文] 作者：王元刚,罗小蓉,葛锐,吴丽娟,陈曦,姚国亮,雷天飞,王琦,范杰,胡夏融,,
来源：Chinese Physics B 年份：2011
A silicon-on-insulator (SOI) high performance lateral double-diffusion metal oxide semiconductor (LDMOS) on a compound buried layer (CBL) with a step buried oxi...
[期刊论文] 作者：罗小蓉,姚国亮,张正元,蒋永恒,周坤,王沛,王元刚,雷天飞,张云轩,魏杰,,
来源：Chinese Physics B 年份：2012
A low on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) n-channel lateral double-diffused metal-oxide-semiconductor(LDMOS) is proposed and its mechanis...
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