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[期刊论文] 作者：A.Resfa,Brahimi.R.Menezla,M.Benchhima,,
来源：Journal of Semiconductors 年份：2014
This work aims to determine the characteristic I(breakdown voltage) of the inverse current in a GaAs PN junction diode, subject to a reverse polarization, while...
Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulat
[期刊论文] 作者：A.Resfa,Bourzig Y Smahi,Brahimi R Menezla,,
来源：半导体学报 年份：2011
The current through a metal-semiconductor junction is mainly due to the majority carriers.Three distinctly different mechanisms exist in a Schottky diode:diffus...
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