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Semiconductor growth features understood by DFT analysis:precursor reactivity and interfaces of GaP/
[会议论文] 作者：A.Stegmüller,R.Tonner,
来源：The 15th ICQC International Congress of Quantum Chemistry(第1 年份：2015
New semiconductor materials are grown on conventional Si(001) substrates in Metal-Organic Vapour Phase Epitaxy(MOVPE) procedures requiring sensitive precursor molecules that cleanly decompose and form...
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