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Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter
[期刊论文] 作者：Aritra Acharyya,Aliva Mallik,D,
来源：半导体学报：英文版 年份：2014
Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzi...
Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter
[期刊论文] 作者：Aritra Acharyya,Aliva Mallik,Debopriya Banerjee,Suman Ganguli,Arindam Das,Sudeepto Dasgupta,J.P.Banerjee,
来源：Journal of Semiconductors 年份：2014
Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzi...
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