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[期刊论文] 作者：Aritra Acharyya,
来源：城市道桥与防洪 年份：2018
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift
[期刊论文] 作者：Aritra Acharyya,Suranjana Banerjee,J.P.Banerjee,,
来源：Journal of Semiconductors 年份：2013
The authors have developed a large-signal simulation technique extending an in-house small-signal simulation code for analyzing a 94 GHz double-drift region imp...
[期刊论文] 作者：Aritra Acharyya,Suranjana Banerjee,J.P.Banerjee,,
来源：Journal of Semiconductors 年份：2014
An attempt is made in this paper to explore the potentiality of semiconducting type-IIb diamond as the base material of double-drift region(DDR) impact avalanch...
Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter
[期刊论文] 作者：Aritra Acharyya,Aliva Mallik,D,
来源：半导体学报：英文版 年份：2014
Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzi...
Influence of self-heating on the millimeter-wave and terahertz performance of MBE grown silicon IMPA
[期刊论文] 作者：S.J.Mukhopadhyay,Prajukta Mukherjee,Aritra Acharyya,Monojit Mitra,
来源：半导体学报（英文版） 年份：2020
The influence of self-heating on the millimeter-wave (mm-wave) and terahertz (THz) performance of double-drift region (DDR) impact avalanche transit time (IMPAT...
Large-signal characterizations of DDR IMPATT devices based on group Ⅲ-Ⅴ semiconductors at millimeter
[期刊论文] 作者：Aritra Acharyya,Aliva Mallik,Debopriya Banerjee,Suman Ganguli,Arindam Das,Sudeepto Dasgupta,J.P.Banerjee,
来源：Journal of Semiconductors 年份：2014
Large-signal(L-S) characterizations of double-drift region(DDR) impact avalanche transit time(IMPATT)devices based on group III–V semiconductors such as wurtzi...
Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regi
[期刊论文] 作者：Aritra Acharyya,Jit Chakraborty,Kausik Das,Subir Datta,Pritam De,Suranjana Banerjee,J.P.Banerjee,,
来源：Journal of Semiconductors 年份：2013
The authors have carried out the large-signal characterization of silicon-based double-drift region(DDR) impact avalanche transit time(IMPATT) devices designed...
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