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[期刊论文] 作者:D. CHEN, 来源:中华医学杂志 年份:1935
[期刊论文] 作者:D. Chen,, 来源:Journal of Thermal Science 年份:1992
Heat transfer and hydrodynamic investigations have been conducted in a 0.108 m internal diameter bubble column at ambient conditions. The column is equipped wi...
[期刊论文] 作者:D. Chen,G.X. Li,D.L. Zhang,T., 来源:金属学报:英文版 年份:2008
平衡结构和 LaNi5-xGax 的电子结构(x=0, 0.5, 1.0 ) 混合物被所有电子计算调查了。基于完整的几何学优化,状态的密度和 LaNi5-xGax 的电子密度被阴谋并且分析。在 Ni 地点的 Ga...
[期刊论文] 作者:D. Chen,L.M. Xu,B.S. Zhang,H.G, 来源:电磁分析与应用期刊(英文) 年份:2010
The reliability of electronic device is threatened in high power microwave (HPM) environment. In accordance with the situation that the emulation is ineffective...
[会议论文] 作者:Xia Y D.,Chen X.,Zhang H, 来源:The 5thInternational Conference on Cryogenics and Refrigerat 年份:2013
[期刊论文] 作者:D. Chen,Y. Zhou,K. E. Lyons,R., 来源:行为与脑科学期刊(英文) 年份:2015
Oxidative stress is one of the underlying causes of Parkinson’s disease (PD). Because of its antioxidant effect, we hypothesize that green tea consumption (3 c...
[会议论文] 作者:Wyser,D. Chen,H. Ritchie, 来源:2011年第二十八届中国气象学会年会 年份:2011
This paper investigates the sensitivity of sea breeze (SB) simulations to combinations of boundary-layer turbulence and land-surface process parameterizations implemented in the MM5 mesoscale meteorol...
[会议论文] 作者:Tian Q.,He G.,Wang H.,Cai D.,Chen L., 来源:The 5thInternational Conference on Cryogenics and Refrigerat 年份:2013
[会议论文] 作者:Tian Q.,He G.,Wang H.,Cai D.,Chen L., 来源:The 5thInternational Conference on Cryogenics and Refrigerat 年份:2013
[期刊论文] 作者:D. Chen,J. C. Jones,, 来源:Journal of Thermal Science 年份:1992
The determination of critical conditions for thermal ignition of combustible materials has been traditionally studied by the use of one overall reaction with b...
[会议论文] 作者:Tan Yan,Lei Yong,Yin Jieyun,Foreman Robert D.,Chen Jiande D.Z.,Sun Xiaoning, 来源:中华医学会第十六次全国消化系病学术会议 年份:2016
[会议论文] 作者:Brett Hallam,D. Chen,J. Shi,M. Kim,B. Stefani,M. Wright,A. Soeriyadi,Z. Holman, 来源:2018 年第十四届中国太阳级硅及光伏发电研讨会 年份:2018
a-Si Based Heterojunction Cells Excellent surface passivation of a-Si:H High VOCs of up to 750 mV [1] The entire device can be fabricated at temperatures below 200 °C Avoid degradation of bulk lifetim...
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