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,Two-dimensional analysis of the interface state effect on current gain for a 4H-SiC bipolar junctio
[期刊论文] 作者:Zhang You-Run,Zhang Bo,Li Zhao-Ji,Deng Xiao-Chuan,
来源:中国物理B(英文版) 年份:2010
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[期刊论文] 作者:Deng Xiao-Chuan,Sun He,Rao Cheng-Yuan,Zhang Bo,
来源:中国物理B(英文版) 年份:2013
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[期刊论文] 作者:Zhang You-Run,Zhang Bo,Li Zhao-Ji,Deng Xiao-Chuan,Liu Xi-Ling,
来源:中国物理B(英文版) 年份:2009
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,Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer laye
[期刊论文] 作者:Deng Xiao-Chuan,Zhang Bo,Zhang You-Run,Wang Yi,Li Zhao-Ji,
来源:中国物理B(英文版) 年份:2011
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,Experimental and numerical analysis of the multi-recessed gate structure for microwave silicon carb
[期刊论文] 作者:Deng Xiao-Chuan,Feng Zhen,Zhang Bo,Li Zhao-Ji,Li Liang,Pan Hong-Shu,
来源:中国物理B(英文版) 年份:2009
This paper reports that multi-recessed gate 4H-SiC MESFETs (metal semiconductor filed effect transistors) with a gate periphery of 5-mm are fabricated and chara...
,Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers wit
[期刊论文] 作者:Wang Xiang-Dong,Deng Xiao-Chuan,Wang Yong-Wei,Wang Yong,Wen Yi,Zhang Bo,
来源:中国物理B(英文版) 年份:2014
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,Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconduct
[期刊论文] 作者:SHEN Hua-Jun,TANG Ya-Chao,PENG Zhao-Yang,DENG Xiao-Chuan,BAI Yun,WANG Yi-Yu,LI Cheng-Zhan,
来源:中国物理快报(英文版) 年份:2015
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