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PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION ULTRALOW DIELECTRIC CONSTANT FILMS USING TRIETHOXYMETHYLSI
[会议论文] 作者：Zi-Jun Ding,Shi-Jin Ding,Wei Zhang,
来源：2016年上海市研究生学术论坛——电子科学与技术 年份：2016
Ultralow dielectric-constant (κ) porous SiCO(H) films were prepared using C7H18O3Si (MTES) and C 10H16 (LIMO) precursors by plasma enhanced chemical vapor deposition (PECVD) and post-deposition anneal...
,Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory app
[期刊论文] 作者：Lan Lan,Gou Hong-Yan,Ding Shi-Jin,Zhang Wei,
来源：中国物理B（英文版） 年份：2013
...
,Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Di
[期刊论文] 作者：HUANG Yu-Jian,HUANG Yue,DING Shi-Jin,ZHANG Wei,LIU Ran,
来源：中国物理快报（英文版） 年份：2007
Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. F...
,ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OFrna-SiOCF FILMS PREPARED BY PLASMA-ENHANCEDrnCHEMICAL
[期刊论文] 作者：DING SHI-JIN,WANG PENG-FEI,ZHANG WEI,WANG JI-TAO,WEI WILLIAM LEE,
来源：中国物理(英文版) 年份：2001
The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Ar using the plasma-enhanced chemical vapourdeposition method is reported. The chemical bonding s...
,High density Al2O3/TaN-based metal-insulator metal capacitors in application to radio frequency int
[期刊论文] 作者：Ding Shi-Jin,Huang Yu-Jian,Huang Yue,Pan Shao-Hui,Zhang Wei,Wang Li-Kang,
来源：中国物理（英文版） 年份：2007
Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited A12O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency in...
,Determining the influence of ferroelectric polarization on electrical characteristics in organic fe
[期刊论文] 作者：Fu Zong-Yuan,Zhang Jian-Chi,Hu Jing-Hang,Jiang Yu-Long,Ding Shi-Jin,Zhu Guo-Dong,
来源：中国物理B（英文版） 年份：2015
...
,Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeS
[期刊论文] 作者：SHI Yu,SUN Qing-Qing,DONG Lin,LIU Han,DING Shi-Jin,ZHANG Wei,
来源：中国物理快报（英文版） 年份：2009
The reaction mechanisms of Al(CH3 )3 (TMA ) adsorption on H-passivated GeSi(l O0)-2 × 1 surface are investigated with density functional theory. The Si-Ge and...
,Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al2O3 Ultra-Thin Film
[期刊论文] 作者：XU Min,LU Hong-Liang,DING Shi-Jin,SUN Liang,ZHANG Wei,WANG Li-Kang,
来源：中国物理快报（英文版） 年份：2005
Ultra-thin Al2O3 dielectric films have been deposited on Si substrates by using trimethyl aluminium (TMA)and water as precursors in an atomic layer deposition (...
,FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Che
[期刊论文] 作者：WANG Peng-Fei,DING Shi-Jin,ZHANG Wei,ZHANG Jian-Yun,WANGJi-Tao,WEI William Lee,
来源：中国物理快报（英文版） 年份：2000
Fluorine doped silicon dioxide (SiOF) thin films have been prepared by plasma enhanced chemical vapor depo sition. The Fourier transform infrared spectrometry (...
[期刊论文] 作者：LIAO Zhong-Wei,HUANG Yue,ZHANG Min,SUN Qing-Qing,DING Shi-Jin,ZHANG Wei,
来源：中国物理快报（英文版） 年份：2008
Charge trapping characteristics of the metal-insulator-silicon (MIS) capacitors with Si02/HfO2/AlO3 stacked dielectrics are investigated for memory applications...
[期刊论文] 作者：SHI Yu,SUN Qing-Qing,DONG Lin,LIU Han,DING Shi-Jin,ZHANG Wei,
来源：中国物理快报（英文版） 年份：2008
Fermi level pinning at the interface between high-k gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-bas...
,Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Emb
[期刊论文] 作者：HUANG Yue,GOU Hong-Yan,SUN Qing-Qing,DING Shi-Jin,ZHANG Wei,ZHANG Shi-Li,
来源：中国物理快报（英文版） 年份：2009
We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand...
[期刊论文] 作者：LIU Han,SUN Qing-Qing,CHEN Lin,XU Yan,DING Shi-Jin,ZHANG Wei,ZHANG Shi-Li,
来源：中国物理快报（英文版） 年份：2010
...
,Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2O3/Hf
[期刊论文] 作者：LIAO Zhong-Wei,GOU Hong-Yan,HUANG Yue,SUN Qing-Qing,DING Shi-Jin,ZHANG Wei,ZHANG Shi-Li,
来源：中国物理快报（英文版） 年份：2009
...
[期刊论文] 作者：LU Hong-Liang,LI Yan-Bo,XU Min,DING Shi-Jin,SUN Liang,ZHANG Wei,WANG Li-Kang,
来源：中国物理快报（英文版） 年份：2006
Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface...
[期刊论文] 作者：DING SHI-JIN,WANG PENG-FEI,ZHANG WEI,WANG JI-TAO,WEI WILLIAM LEE,ZHANG YE-WEN,KIA ZHONG-FU,
来源：中国物理(英文版) 年份：2000
With the development of ultralarge scale integrated circuit, new interlayer dielectrics with low dielectric constant for multilevel interconnections are require...
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