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[期刊论文] 作者：Xu Zhi-Hao,Zhang Jin-Cheng,Zhang Zhong-Fen,Zhu Qing-Wei,Duan Huan-Tao,Hao Yue,
来源：中国物理B（英文版） 年份：2009
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,High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility t
[期刊论文] 作者：Gu Wen-Ping,Duan Huan-Tao,Ni Jin-Yu,Hao Yue,Zhang Jin-Cheng,Feng Qian,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2009
AlGaN/GaN high electron mobility transistors(HEMTs)are fabricated by employing SiN passivation,this paper investigates the degradation due to the high-electric-...
,Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the tra
[期刊论文] 作者：Liu Zi-Yang,Zhang Jin-Cheng,Duan Huan-Tao,Xue Jun-Shuai,Lin Zhi-Yu,Ma Jun-Cai,Xue Xiao-Yong,Hao Yue,
来源：中国物理B（英文版） 年份：2011
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