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[期刊论文] 作者:LI Fu-xiang,LI Fu-hua,YANG Ya-, 来源:农业科学学报:英文版 年份:2019
Eleven grape cultivars were analysed to explore the variety differences of fresh grape phenolic profiles. The results showed that free phenolics were predominan...
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2020
The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate...
[期刊论文] 作者:LI Fu-xiang,LI Fu-hua,YANG Ya-, 来源:城市道桥与防洪 年份:2019
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:Yao Fei,Yu-Ming He,Xiao-Dong Wang,Fu-Hua Yang,Zhao-Feng Li, 来源:中国物理B(英文版) 年份:2018
Resonator integrated optic gyro (RIOG) is a high-accuracy gyroscope based on the Sagnac effect. The waveguide-type ring resonator is a key rotation sensing elem...
[期刊论文] 作者:Xiao-Song Zhao,Wei-Hua Han,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2018
We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from...
[期刊论文] 作者:Yang-Yan Guo,Wei-Hua Han,Xiao-Di Zhang,Jun-Dong Chen,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2022
We investigate the influence of source and drain bias voltages (VDS) on the quantum sub-band transport spectrum in the 10-nm width N-typed j unctionless nanowire transistor at the low temperature of 6 K.We demonstrate that the transverse el......
[期刊论文] 作者:Yan-Xia Ye,Xiu-Ming Dou,Kun Ding,Fu-Hua Yang,De-Sheng Jiang,Bao-Quan Sun, 来源:中国物理快报(英文版) 年份:2017
Fluorescence intermittent dynamics of single quantum emitters in monolayer WSe2 are investigated via measuring spectrally resolved time traces and time-dependen...
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Xiao-Song Zhao,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2018
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the...
[期刊论文] 作者:Yang-Yan Guo,Wei-Hua Han,Xiao-Song Zhao,Ya-Mei Dou,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanow...
[期刊论文] 作者:Ya-Mei Dou,Wei-Hua Han,Yang-Yan Guo,Xiao-Song Zhao,Xiao-Di Zhang,Xin-Yu Wu,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanow...
[期刊论文] 作者:Shu-Yuan Zhang,Wen Liu,Zhao-Feng Li,Min Liu,Yu-Sheng Liu,Xiao-Dong Wang,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Hao Wang,Wei-Hua Han,Xiao-Song Zhao,Wang Zhang,Qi-Feng Lyu,Liu-Hong Ma,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Wang Zhang,Wei-Hua Han,Xiao-Song Zhao,Qi-Feng Lv,Xiang-Hai Ji,Tao Yang,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2017
High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown...
[期刊论文] 作者:Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2016
[期刊论文] 作者:Xiao-Di Zhang,Wei-Hua Han,Wen Liu,Xiao-Song Zhao,Yang-Yan Guo,Chong Yang,Jun-Dong Chen,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2019
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by var...
[期刊论文] 作者:Ji-Cong Zhao,Quan Yuan,Feng-Xiang Wang,Xiao Kan,Guo-Wei Han,Ling Sun,Hai-Yan Sun,Fu-Hua Yang, 来源:中国物理B(英文版) 年份:2017
In this paper,we present a three-dimensional (3D) vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system (RF MEMS) res...
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