搜索筛选:
搜索耗时5.6871秒,为你在为你在102,285,761篇论文里面共找到 4 篇相符的论文内容
发布年度:
,A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Ach
[期刊论文] 作者：LIU Yan,WANG Hong-Juan,YAN Jing,HAN Gen-Quan,
来源：中国物理快报（英文版） 年份：2013
We report the demonstration of an n-channel lateral Si tunnel field-effect transistor (TFET) with a single crystalline Ge source fabricated using the gate-last...
[期刊论文] 作者：HAN Gen-Quan,ZENG Yu-Gang,YU Jin-Zhong,CHENG Bu-Wen,YANG Hai-Tao,
来源：中国物理快报（英文版） 年份：2008
We present different relaxation mechanisms of Ge and SiGe quantum dots under excimer laser annealing.Inyestigation of the coarsening and relaxation of the dots...
,Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffe
[期刊论文] 作者：SU Shao-Jian,HAN Gen-Quan,ZHANG Dong-Liang,ZHANG Guang-Ze,XUE Chun-Lai,WANG Qi-Ming,CHENG Bu-Wen,
来源：中国物理快报（英文版） 年份：2013
Germanium-tin (Ge1-xSnx) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge0.985Sn0.015 thin film that was...
,Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior
[期刊论文] 作者：WANG Hong-Juan,HAN Gen-Quan,LIU Yan,YAN Jing,ZHANG Chun-Fu,ZHANG Jin-Cheng,HAO Yue,
来源：中国物理快报（英文版） 年份：2014
We investigate negative bias temperature instability (NBTI) on high performance Ge p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with...
相关搜索：
