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[期刊论文] 作者：LIU Caichi,HAO Qiuyan,ZHANG Ji,
来源：北京科技大学学报 年份：2006
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[期刊论文] 作者：Sun Shilong Hao Qiuyan Zhao L,
来源：中国稀土学报：英文版 年份：2006
Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing...
[期刊论文] 作者：Sun Shilong,Hao Qiuyan,Zhao Li,
来源：稀土学报（英文版） 年份：2004
Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing...
[期刊论文] 作者：LIU Caichi,HAO Qiuyan,ZHANG Ji,
来源：稀有金属（英文版） 年份：2004
The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optic...
[期刊论文] 作者：Ren Bingyan,Liu Caichi,Hao Qiuyan,Zhang Zhicheng,Wang Haiyun,
来源：稀有金属(英文版) 年份：2000
New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied...
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