搜索筛选:
搜索耗时3.3124秒,为你在为你在102,285,761篇论文里面共找到 7 篇相符的论文内容
发布年度:
[期刊论文] 作者：XUE Jun-,CHEN Dun-Jun,LIU Bin,XIE Zi-Li,JIANG Ruo-Lian,ZHANG Rong,ZHENG You-Dou,
来源：中国物理快报（英文版） 年份：2009
...
,Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostruct
[期刊论文] 作者：JI Xiao-Li,CHEN Fan,JIANG Ruo-Lian,ZHOU Jian-Jun,WEN Bo,HAN Ping,XIE Zi-Li,ZHANG Rong,ZHENG You-Dou,
来源：中国物理快报（英文版） 年份：2005
The energy band diagram and charge distribution of the unintentional doped AlGaN/GaN/AlGaN/GaN doubleheterostructure were obtained by self-consistent Poisson-Sc...
[期刊论文] 作者：Zhou Jian-Jun,Wen Bo,Jiang Ruo-Lian,Liu Cheng-Xiang,Ji Xiao-Li,Xie Zi-Li,Chen Dun-Jun,Han Ping,Zhang,
来源：中国物理（英文版） 年份：2007
In0.3Ga0.7N metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were...
[期刊论文] 作者：JI Xiao-Li,JIANG Ruo-Lian,XIE Zi-Li,LIU Bin,ZHOU Jian-Jun,LI Liang,HAN Ping,ZHANG Rong,ZHENG You-Dou,,
来源：中国物理快报（英文版） 年份：2007
Thirty-pair Al0.3Ga0.7N/AlN distributed Bragg reflectors centred at 320nm are designed and grown on sapphire substrates by metalorganic chemical vapour depositi...
,Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga2O3 Substrates by Metalorganic Chemic
[期刊论文] 作者：XIE Zi-Li,ZHANG Rong,XIA Chang-Tai,XIU Xiang-Qian,HAN Ping,LIU Bin,ZHAO Hong,JIANG Ruo-Lian,SHI Yi,ZHENG,
来源：中国物理快报（英文版） 年份：2008
The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes (LEDs) on (100) β-Ga2O3 single crystal substrates by metal-organic ch...
[期刊论文] 作者：Zhou Jian-Jun(周建军),Jiang Ruo-Lian(江若琏),Sha Jin(沙金),Liu Jie(刘杰),Shen Bo(沈波),Zhang Rong(张荣),Zheng You-Dou,
来源：中国物理(英文版) 年份：2003
GaN epilayers were grown on sapphire substrates by metal-organic chemical vapour deposition. Metal-semiconductor-metal photoconductive detectors were fabricated...
[期刊论文] 作者：WEN Bo(文博),JIANG Ruo-Lian(江若琏),ZHOU Jian-Jun(周建军),JI Xiao-Li(姬小利),LIANG Ling-Yan(梁凌燕),KONG Yue-Chan(孔月婵,
来源：中国物理快报（英文版） 年份：2004
The unintentionally doped samples of Al0.22 Ga0. 78N/GaN/Al0.22 Ga0. 78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced...
相关搜索：
