搜索筛选:
搜索耗时5.1757秒,为你在为你在102,285,761篇论文里面共找到 5 篇相符的论文内容
发布年度:
[期刊论文] 作者：Fang Ze-Bo,Zhu Yan-Yan,Wang Jia-Le,Jiang Zui-Min,
来源：中国物理B（英文版） 年份：2009
...
[期刊论文] 作者：Su Wei-Feng,Gnaser Hubert,Fan Yong-Liang,Jiang Zui-Min,Le Yong-Kang,
来源：中国物理B(英文版) 年份：2008
Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambi-ent. X-ray diffraction (XRD), Auger electron spectroscop...
,Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomi
[期刊论文] 作者：WU Rong,LIN Jian-Hui,ZHANG Sheng-Li,YANG Hong-Bin,JIANG Zui-Min,YANG Xin-Ju,
来源：中国物理快报（英文版） 年份：2008
Electrical properties of individual serf-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room...
[期刊论文] 作者：XUE Xian-Ying,WANG Yu-Zhui,JIA Quan-Jie,WANG Yong,CHEN Yu,JIANG Xiao-Ming,ZHU Yan-Yan,JIANG Zui-Min,
来源：中国物理快报（英文版） 年份：2007
Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown tinder optimized condition is characterized in its micros...
[期刊论文] 作者：JIA QUAN-JIE,ZHENG WEN-LI,WANG ZHOU-GUANG,WANG JUN,JIANG XIAO-MING,JIANG ZUI-MIN,PEI CHENG-WEN,QIN JIE,
来源：物理学报（海外版）（英文版） 年份：1998
The distribution of Sb atoms in δ-doped silicon crystals grown by molecular beam epitaxy at different temperatures was measured using the technique of synchrot...
相关搜索：
