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[会议论文] 作者:Jinhyung Park,Jaihyung Won,Hyeondeok Lee,Heeyeop Chae, 来源:2011年第三届微电子及等离子体技术国际会议 年份:2011
The effects of annealing and plasma oxidation on phosphorus-doped poly-silicon layers were studied in this work.Plasma oxidation resulted in reduced poly-Si thickness and reduced phosphorous dopant co...
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