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[期刊论文] 作者：Li Xin-Hua,Zhong Fei,Qiu Kai,Yin Zhi-Jun,Ji Chang-Jian,
来源：中国物理B（英文版） 年份：2008
This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate w...
,Preparation and Properties of Diluted Magnetic Semiconductors GaMnAs by Low-Temperature Molecular E
[期刊论文] 作者：JI Chang-Jian,ZHANG Cheng-Qiang,ZHAO Gang,WANG Wen-Ding,SUN Gang,YUAN Hui-Min,HAN Qi-Feng,
来源：中国物理快报（英文版） 年份：2011
GaMnAs films are prepared by low-temperature molecular beam epitaxy.Based on the experimental results,the influence of growth and annealing conditions on the ph...
,GaN layers with different polarities prepared by radio frequency molecular beam epitaxy and charact
[期刊论文] 作者：Zhong Fei,Li Xin-Hua,Qiu Kai,Yin Zhi-Jun,Ji Chang-Jian,Cao Xian-Cun,Han Qi-Feng,Chen Jia-Rong,Wang Yu-Qi,
来源：中国物理（英文版） 年份：2007
GaN layers with different polarities have been prepared by radio-frequency molecular beam epitaxy (RF-MBE) and characterized by Raman scattering. Polarity contr...
[期刊论文] 作者：Qiu Kai,Zhong Fei,Li Xin-Hua,Yin Zhi-Jun,Ji Chang-Jian,Han Qi-Feng,Chen Jia-Rong,Cao Xian-Cun,Wang Yu-Qi,
来源：中国物理（英文版） 年份：2007
This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker fi...
[期刊论文] 作者：HAN Qi-Feng,DUAN Cheng-Hong,QIU Kai,JI Chang-Jian,LI Xin-Hua,ZHONG Fei,YIN Zhi-Jun,CAO Xian-Cun,ZHOU,
来源：中国物理快报（英文版） 年份：2007
Self-seeded aluminium nitride (AIN)crystals are grown in tungsten and hot pressed boron nitride(HPBN)crucibles With different shapes by a sublimation method.The...
[期刊论文] 作者：QIU Kai, YIN Zhi-Jun,LI Xin-Hua,ZHONG Fei,JI Chang-Jian,HAN Qi-Feng,CAO Xian-cun,CHEN Jia-Rong,LUO Xiang-Dong,
来源：中国物理快报（英文版） 年份：2007
The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5...
[期刊论文] 作者：XIE Xin-Jian,ZHONG Fei,QIU Kai,LIU Gui-Feng,YIN Zhi-Jun,WANG Yu-Qi,LI Xin-Hua,JI Chang-Jian,HAN Qi-Fen,
来源：中国物理快报（英文版） 年份：2006
We report the reduced-strain gallium-nitride (GaN) epitaxial growth on (0001) oriented sapphire by using quasi-porous GaN template. A GaN film in thickness of a...
,Effect of Ⅲ/Ⅴ Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Film
[期刊论文] 作者：ZHONG Fei,QIU Kai,LI Xin-Hua,YIN Zhi-Jun,XIE Xin-Jian,WANG Yang,JI Chang-Jian,CAO Xian-Cun,HAN Qi-Feng,
来源：中国物理快报（英文版） 年份：2007
We investigate the effect of Al/N ratio of the high temperature (HT) AlN buffer layer on polarity selection and electrical quality of GaN films grown by radio f...
,Theoretical Analysis of Current Crowding Effect in Metal/AlGaN/GaN Schottky Diodes and Its Reductio
[期刊论文] 作者：CHEN Jia-Rong,CHEN Wen-Jin,WANG Yu-Qi,QIU Kai,LI Xin-Hua,ZHONG Fei,YIN Zhi-Jun,JI Chang-Jian,CAO Xian-Cun,
来源：中国物理快报（英文版） 年份：2007
There exists a current crowding effect in the anode of A1GaN/GaN heteto junction Schottky diodes, causing local overheating when working at high power density,...
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