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[期刊论文] 作者：Baoshun Wang,Jiangwei Cui,Qi G,
来源：半导体学报:英文版 年份：2020
We investigate the hot carrier injection effect(HCI)and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation b...
[期刊论文] 作者：Baoshun Wang,Jiangwei Cui,Qi Guo,Qiwen Zheng,Ying Wei,Shanxue Xi,
来源：半导体学报（英文版） 年份：2020
We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation...
,Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noi
[期刊论文] 作者：Qiwen Zheng,Jiangwei Cui,Mengxin Liu,Dandan Su,Hang Zhou,Teng Ma,Xuefeng Yu,Wu Lu,Qi Guo,Fazhan Zhao,
来源：中国物理B（英文版） 年份：2017
In this work,the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability...
[期刊论文] 作者：Sheng Yang,Xiaowen Liang,Jiangwei Cui,Qiwen Zheng,Jing Sun,Mohan Liu,Dang Zhang,Haonan Feng,Xuefeng Yu,
来源：半导体学报:英文版 年份：2021
Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are switching in a space environment.In this study,the total ionizing dose(TID)responses of SiC power MOSFETs are investigated ......
[期刊论文] 作者：Sheng Yang,Xiaowen Liang,Jiangwei Cui,Qiwen Zheng,Jing Sun,Mohan Liu,Dang Zhang,Haonan Feng,Xuefeng Yu,
来源：半导体学报（英文版） 年份：2004
Different switching frequencies are required when SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)are switching in a space environment.In this st...
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