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[期刊论文] 作者：Yu Jin-Ling,Chen Yong-Hai,Lai Yun-Feng,Cheng Shu-Ying,
来源：中国物理B（英文版） 年份：2014
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,Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity sur
[期刊论文] 作者：Zhang Jie,Yu Jin-Ling,Cheng Shu-Ying,Lai Yun-Feng,Chen Yong-Hai,
来源：中国物理B（英文版） 年份：2014
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,Improvement of Electrical Properties of the Ge2Sb2Te5 Film by Doping Si for Phase-Change Random Acc
[期刊论文] 作者：QIAO Bao-Wei,FENG Jie,LAI Yun-Feng,LING Yun,LIN Yin-Yin,TANG Ting-Ao,CAI Bing-Chu,CHEN Bomy,
来源：中国物理快报（英文版） 年份：2006
Si-doped Ge2Sb2Te5 films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge2Sb2Te5 film results in the...
,Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si11Sb39T
[期刊论文] 作者：LAI Yun-Feng,FENG Jie,QIAO Bao-Wei,HUANG Xiao-Gang,CAI Yan-Fei,LIN Yin-Yin,TANG Ting-Ao,CAI Bing-Chu,,
来源：中国物理快报（英文版） 年份：2006
The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage c...
,Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performanc
[期刊论文] 作者：CAI Yan-Fei,ZHOU Peng,LIN Yin-Yin,TANG Ting-Ao,CHEN Liang-Yao,LI Jing,QIAO Bao-Wei,LAI Yun-Feng,FENG,
来源：中国物理快报（英文版） 年份：2007
Electrical properties and phase structures of (Si+N)-codoped Ge2Sb2Te5 (GST) for phase change memory are investigated to improve the memory performance. Compare...
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