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[期刊论文] 作者:YANG Zongren LIANG Renrong XU, 来源:稀有金属:英文版 年份:2006
Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials.Instead of using graded buffer method to obtain fully relax...
[期刊论文] 作者:YANG Zongren,LIANG Renrong,XU, 来源:稀有金属 年份:2004
Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials.Instead of using graded buffer method to obtain fully relax...
[期刊论文] 作者:LIU Jialei,LIANG Renrong,WANG, 来源:清华大学学报(英文版) 年份:2004
The paper describes the growth of a germanium (Ge) film on a thin relaxed Ge-rich SiGe buffer.The thin Ge-rich SiGe buffer layer was achieved through a combinat...
[期刊论文] 作者:LIANG Renrong,WANG Jing,XU Jun, 来源:清华大学学报(英文版) 年份:2004
High quality strain-relaxed thin SiGe virtual substrates have been achieved by combining the misfit strain technique and the point defect technique.The point de...
[期刊论文] 作者:LIANG Renrong,WANG Jing,XU Jun, 来源:黑龙江科技学院学报 年份:2009
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
[期刊论文] 作者:Zhao Mei,Liang Renrong,Wang Jing,Xu Jun, 来源:城市道桥与防洪 年份:2013
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:ZHAO Mei,LIANG RenRong,WANG Jing,XU Jun,, 来源:Science China(Physics,Mechanics & Astronomy) 年份:2013
In this paper, we report the fabrication, electrical and physical characteristics of TiN/HfO2/Si MOS capacitors with erbium (Er) ion implantation. It is demonst...
[期刊论文] 作者:Zhou Xuliang,Pan Jiaoqing,Liang Renrong,Wang Jing,Wang Wei, 来源:城市道桥与防洪 年份:2014
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:Cui Ning,Liang Renrong,Wang Jing,Zhou Wei,Xu Jun, 来源:城市道桥与防洪 年份:2012
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:Wang Wei,Wang Jing,Zhao Mei,Liang Renrong,Xu Jun, 来源:城市道桥与防洪 年份:2012
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:XIE Qian,LIANG RenRong,WANG Jing,LIU LiBin,XU Jun,, 来源:Science China(Information Sciences) 年份:2014
In this paper,a three-dimensional(3-D)analytical model for short-channel effects(SCEs)in a nanoscale triple-gate(TG)FinFET is derived based on solving a boundar...
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