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[期刊论文] 作者:Yu LIU,Cheng-Xiang WANG,Carlos LOPEZ,Xiaohu GE,, 来源:Science China(Information Sciences) 年份:2017
This paper proposes three-dimensional(3D) non-stationary wideband circular geometry-based stochastic models(GBSMs) for high-speed train(HST) tunnel scenarios. C...
[期刊论文] 作者:Yu LIU,Cheng-Xiang WANG,Carlos LOPEZ,Xiaohu GE, 来源:中国科学(信息科学) 年份:2017
This paper proposes three-dimensional (3D) non-stationary wideband circular geometry-based stochastic models (GBSMs) for high-speed train (HST) tunnel scenarios...
[期刊论文] 作者:LIU Cheng-Xiang,ZHANG Li,WU Xu,RUAN Shuang-Chen, 来源:中国物理快报(英文版) 年份:2012
A superfluorescent fiber source (SFS) based on an Er3+-doped photonic crystal fiber (EDPCF) is reported.Owing to the temperature insensitivity of the EDPCF,we s...
[期刊论文] 作者:YAN Pei-Guang,RUAN Shuang-Chen,GUO Chun-Yu,YU Yong-Qin,SU Hong,LIU Cheng-Xiang, 来源:中国物理快报(英文版) 年份:2006
We investigate a photonic crystal fibre Raman laser using fibre Bragg grating pairs as cavity mirrors. The threshold pump power is up to 0.65 W by decreasing th...
[期刊论文] 作者:YU Yong-Qin,RUAN Shuang-Chen,CHENG Chao,DU Chen-Lin,LIU Cheng-Xiang,LIN Hao-Jia, 来源:中国物理快报(英文版) 年份:2005
The spectral broadening with the bandwidth of 83nm (1.2486-1.3318μm) in the 1.3μm region is achieved in a 0.2-m-long, polarization-maintaining photonic crysta...
[期刊论文] 作者:YAN Pei-Guang,RUAN Shuang-Chen,YU Yong-Qin,GUO Chun-Yu,GUO Yuan,LIU Cheng-Xiang, 来源:中国物理快报(英文版) 年份:2006
A cw Raman laser based on a 100-m photonic crystal fibre is demonstrated with up to 3.8 W output power at the incident pump power of 12 W, corresponding to an o...
[期刊论文] 作者:Zou Jun,Liu Cheng-Xiang,Zhou Sheng-Ming,Wang Jun,Zhou Jian-Hua,Huang Tao-Hua,Han Ping,Xie Zi-Li,Zhang, 来源:中国物理(英文版) 年份:2006
This paper reports that the m-plane GaN layer is grown on (200)-plane LiAlO2 substrate by metal-organic chemical vapour deposition (MOCVD) method. Tetragonal-sh...
[期刊论文] 作者:Zhou Jian-Jun,Wen Bo,Jiang Ruo-Lian,Liu Cheng-Xiang,Ji Xiao-Li,Xie Zi-Li,Chen Dun-Jun,Han Ping,Zhang, 来源:中国物理(英文版) 年份:2007
In0.3Ga0.7N metal-insulator-semiconductor (MIS) and metal-semiconductor (MS) surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were...
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