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,Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless tran
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2020
The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate...
,Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowir
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Xiao-Song Zhao,Yang-Yan Guo,Ya-Mei Dou,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2018
We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the...
,Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire t
[期刊论文] 作者：Hao Wang,Wei-Hua Han,Xiao-Song Zhao,Wang Zhang,Qi-Feng Lyu,Liu-Hong Ma,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2016
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,Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosec
[期刊论文] 作者：Liu-Hong Ma,Wei-Hua Han,Hao Wang,Qi-feng Lyu,Wang Zhang,Xiang Yang,Fu-Hua Yang,
来源：中国物理B（英文版） 年份：2016
...
[期刊论文] 作者：Shu-Xiang Sun,Ming-Ming Chang,Meng-Ke Li,Liu-Hong Ma,Ying-Hui Zhong,Yu-Xiao Li,Peng Ding,Zhi Jin,Zhi-Chao,
来源：中国物理B（英文版） 年份：2019
The performance damage mechanism of InP-based high electron mobility transistors (HEMTs) after proton irradiation has been investigated comprehensively through...
[期刊论文] 作者：Ying-Hui Zhong,Bo Yang,Ming-Ming Chang,Peng Ding,Liu-Hong Ma,Meng-Ke Li,Zhi-Yong Duan,Jie Yang,Zhi Jin,
来源：中国物理B（英文版） 年份：2020
An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si...
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