【摘 要】
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An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si
【机 构】
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School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China“,”Institute of
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An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. More-over, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared indetail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 1011 cm?2,1× 1012 cm?2, and 5× 1012 cm?2. DC and RF characteristics for both structures are observed to decrease gradually asirradiation dose rises, which particularly show a drastic drop at dose of 5× 1012 cm?2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
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