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Etching characteristics of SiO2 layer using amorphous carbon mask in dual-frequency capacitively cou
[会议论文] 作者：N.-E. Lee,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
As critical dimension (CD) in the nano-scale semiconductor devices during the fabrication of Si integrated circuits continuously decrease,etch selectivity control during patterning of nano-scale struc...
Reduction of global warming gas emission during silicon nitride etching by using C3F6/O2 gas chemist
[会议论文] 作者：N.-E. Lee,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
Global warming gas emission such as perfluorocarbon compounds (PFCs) has been an issue in the semiconductor and display industries due to their large global warming potentials (GWPS)....
Bending characteristics of flexible amorphous InGaZnO thin film transistors with organic/inorganic m
[会议论文] 作者：N.-E. Lee,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si:H and poly-Si semiconductor due to the advantages of a low-cost low-temperature...
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