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[期刊论文] 作者：P.Vimala,N.B.Balamurugan,,
来源：Journal of Semiconductors 年份：2014
Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantizati...
Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOS
[期刊论文] 作者：P.Vimala,N.B.Balamurugan,,
来源：Journal of Semiconductors 年份：2013
An analytical model for surrounding gate metal–oxide–semiconductor field effect transistors(MOSFETs)considering quantum effects is presented.To achieve this g...
[期刊论文] 作者：P.Vimala,N.B.Balamurugan,,
来源：半导体学报 年份：2012
A physics-based analytical model for symmetrically biased double-gate(DG) MOSFETs considering quantum mechanical effects is proposed.Schrodinger’s and Poisson...
[期刊论文] 作者：T.S.Arun Samuel,N.B.Balamurugan,,
来源：Journal of Semiconductors 年份：2014
This paper proposes a new two dimensional(2D) analytical model for a germanium(Ge) single gate silicon-on-insulator tunnel field effect transistor(SG SOI TFET)....
Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k
[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,,
来源：Journal of Semiconductors 年份：2014
We have analyzed the effective oxide thickness(EOT) of the dielectric material for which we have optimum performance and the output characteristics of the silic...
[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,G.Lakshmi Priya,S.Manikandan,,
来源：Chinese Physics B 年份：2015
We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors(HEMTs) by solving the two-dimensional(2D) Poisson equation. In our...
Analysis of charge density and Fermi level of AlInSb/InSb single-gate high electron mobility transis
[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,M.Bhuvaneswari,N.Anbuselvan,N.Mohankumar,
来源：城市道桥与防洪 年份：2015
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Analysis of charge density and Fermi level of Al In Sb/In Sb single-gate high electron mobility tran
[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,M.Bhuvaneswari,N.Anbuselvan,N.Mohankumar,,
来源：Journal of Semiconductors 年份：2015
A compact model is proposed to derive the charge density of the Al In Sb/In Sb HEMT devices by considering the variation of Fermi level, the first subband, the...
[期刊论文] 作者：S.Theodore Chandra,N.B.Balamurugan,G.Subalakshmi,T.Shalini,G.Lakshmi Priya,,
来源：Journal of Semiconductors 年份：2014
We have developed a 2D analytical model for the single gate AlInSb/InSb HEMT device by solving the Poisson equation using the parabolic approximation method.The...
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