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,Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk mat
[期刊论文] 作者：Cen Long-Bin,Shen Bo,Qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
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,Influence of applied electric field on the absorption coefficient and subband distances in asymmetr
[期刊论文] 作者：Cen Long-Bin,Shen Bo,qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
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[期刊论文] 作者：Li Tao,Qin Zhi-Xin,Xu Zheng-Yu,Shen Bo,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：Tao Ren-Chun,Yu Tong-Jun,Jia Chuan-Yu,Chen Zhi-Zhong,Qin Zhi-Xin,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
Strain effects on the polarized optical properties of c-plane and m-plane InxGa1-xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by an...
[期刊论文] 作者：Liu Fang,Qin Zhi-Xin,Xu Fu-Jun,Zhao Sheng,Kang Xiang-Ning,Shen Bo,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：SANG Li-Wen,QIN Zhi-Xin,CEN Long-Bin,CHEN Zhi-Zhong,YANG Zhi-Jian,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
Al0.2Ga0.sN/GaN samples are grown by metalorganic chemical vapour deposition (MOCVD) method on (0001) sapphire substrates. A 10nm-thick Ni layer is deposited on...
[期刊论文] 作者：YU Tong-Jun,KANG Xiang-Ning,PAN Yao-Bo,QIN Zhi-Xin,CHEN Zhi-Zhong,YANG Zhi-Jian,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
InGaN/GaN MQWs,InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off techn...
[期刊论文] 作者：MU Sen,YU Tong-Jun,HUANG Liu-Bing,JIA Chuan-Yu,PAN Yao-Bo,YANG Zhi-Jian,CHEN Zhi-Zhong,QIN Zhi-Xin,ZHANG,
来源：中国物理快报（英文版） 年份：2007
Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 n...
[期刊论文] 作者：WANG Mao-Jun,SHEN Bo,XU Fu-Jun,WANG Yan,XU Jian,HUANG Sen,YANG Zhi-Jian,QIN Zhi-Xin,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperat...
[期刊论文] 作者：XU Zheng-Yu,QIN Zhi-Xin,SANG Li-Wen,ZHANG Yan-Zhao,SHEN Bo,ZHANG Guo-Yi,ZHAO Lan,ZHANG Xiang-Feng,CHENG,
来源：中国物理快报(英文版) 年份：2010
Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD)using an indium-assisted growth method.At ro...
[期刊论文] 作者：SANG Li-Wen,QIN Zhi-Xin,FANG Hao,ZHANG Yan-Zhao,LI Tao,XU Zheng-Yu,YANG Zhi-Jian,SHEN Bo,ZHANG Guo-Yi,
来源：中国物理快报(英文版) 年份：2009
...
[期刊论文] 作者：SANG Li-Wen,QIN Zhi-Xin,CEN Long-Bin,SHEN Bo,ZHANG Guo-Yi,LI Shu-Ping,CHEN Hang-Yang,LIU Da-Yi,KANG Jun-Yong,
来源：中国物理快报（英文版） 年份：2008
We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoffwavelength from 280nm to 292nm without bias.The devic...
,Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitti
[期刊论文] 作者：LI Zhong-Hui(李忠辉),YANG Zhi-Jian(杨志坚),QIN Zhi-Xin(秦志新),TONG Yu-Zhen(童玉珍),YU Tong-Jun(于彤军),LU Shu(陆曙),YANG,
来源：中国物理快报（英文版） 年份：2003
The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW)structure were grown by low-pressure metalorganic vapour phas...
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